| PART |
Description |
Maker |
| 3SK103 |
Silicon N-Channel Dual Gate MOS FET
|
ETC
|
| 3SK321 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
| BF981 |
SILICON N-CHANNEL DUAL GATE MOS-FET
|
NXP Semiconductors
|
| 3SK297ZP-TL-E 3SK297 |
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
| 3SK295ZQ-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-61AA, MPAK-4
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
| 3SK296ZQ-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-82A, CMPAK-4
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
| NE41137 |
N-Channel GaAs Dual Gate MES FET
N-CHANNEL GAASDUAL-GATE MESFET
|
California Eastern Laboratories
NEC[NEC]
|
| 3SK317 |
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Hitachi Semiconductor
|
| 3SK300 3SK300ZR-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-61AA, MPAK-4
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Comchip Technology Co., Ltd.
Renesas Electronics Corporation
|
| IW4012BD IW4012BN |
Dual 4-input NAND gate, high-voltage silicon-gate CMOS
|
INTEGRAL
|
| KK74AC20D KK74AC20N |
Dual 4-Input NAND Gate High-Speed Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
